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MKI100-12F8 IXYS IGBT

MKI100-12F8

  • Model: MKI100-12F8
  • 201 Units in Stock
  • Manufactured by: IXYS

Description of MKI100-12F8

Manufacturer:Infineon
Product Category:IGBT Modules
RoHS:No
Product:IGBT Silicon Modules
Configuration:Single Dual Emitter
Collector- Emitter Voltage VCEO Max:1200 V
Collector-Emitter Saturation Voltage:2.1 V
Continuous Collector Current at 25 C:625 A
Gate-Emitter Leakage Current:400 nA
Power Dissipation:2500 W
Maximum Operating Temperature:+ 125 C
Package / Case:62MM
Maximum Gate Emitter Voltage:+/- 20 V
Minimum Operating Temperature:- 40 C
Mounting Style:Screw
Standard Pack Qty:500

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