MUBW10-12A7 IXYS IGBT

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MUBW10-12A7

Model: MUBW10-12A7
270 Units in Stock
Manufactured by: IXYS

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Description of MUBW10-12A7

Description

Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of one IGBT in a single configuration with a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.

Key Parameters Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified

Ratings	Symbol	CM50TF-24H	Units
Junction Temperature	T_j	-40 to 150	°C
Storage Temperature	T_stg	-40 to 125	°C
Collector-Emitter Voltage (G-E SHORT)	V_CES	1200	Volts
Gate-Emitter Voltage (C-E SHORT)	V_GES	±20	Volts
Collector Current (T_C = 25°C)	I_C	50	Amperes
Peak Collector Current	I_CM	100*	Amperes
Emitter Current** (T_c = 25°C)	I_E	50	Amperes
Peak Emitter Current**	I_EM	100*	Amperes
Maximum Collector Dissipation (T_c = 25°C, T_j ≤ 150°C)	P_c	400	Watts
Mounting Torque, M4 Main Terminal	–	0.98 ~ 1.47	N · m
Mounting Torque, M5 Mounting	–	1.47 ~ 1.96	N · m
Weight	–	540	Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)	V_iso	2500	Vrms