>

MUBW50-12A8 IXYS IGBT

MUBW50-12A8

  • Model: MUBW50-12A8
  • 269 Units in Stock
  • Manufactured by: IXYS

Description of MUBW50-12A8

Key Parameters Absolute Maximum Ratings, Tj = 25 °C Unless Otherwise Specified

SymbolParameterConditionsRatingsUnit
VCESCollector-emitter voltageG-E Short600V
VGESGate-emitter voltageC-E Short±20V
ICCollector current
TC = 25°C150A
ICMPulse                                                                 (Note 2)300
IE (Note 1)Emitter current
TC = 25°C150A
IEM (Note 1)Pulse                                                                 (Note 2)300
PC (Note 3)Maximum collector dissipationTC = 25°C520W
TjJunction temperature
–40 ~ +150°C
TstgStorage temperature
–40 ~ +125°C
VisoIsolation voltageTerminals to base plate, f = 60Hz, AC 1 minute 2500Vrms
—Torque strengthMain terminals M5 screw2.5 ~ 3.5N • m
Mounting M5 screw2.5 ~ 3.5N • m
—WeightTypical value680g

1. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi).

2. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating.

3. Junction temperature (Tj) should not increase beyond 150°C.


Request for Quote

Your Name*
Company Name*
Country*
Tel*
Email*
We will not use your email for any purpose other than to communicate with you about the information regarding IGBT Express related activity, we will not provide your email to any third party.
Comments If you're looking for other components, please enter part number, quantity in the comment box, or submit RFQ to Email info@igbtexpress.com or sales@jitcomp.com, we will find it for you, even if it didn't show in our inventory database
Part Number Quantity

Related IXYS IGBT product

MUBW50-06A8MUBW50-06A8
MUBW50-12E8 MUBW50-12E8
Copyright © 2024 IGBT Express. Powered by IGBT Express, IGBT Express,fast delivered.