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MWI35-12T7T IXYS IGBT

MWI35-12T7T

  • Model: MWI35-12T7T
  • 288 Units in Stock
  • Manufactured by: IXYS

Description of MWI35-12T7T

Manufacturer:Infineon
Product Category:IGBT Modules
RoHS:No
Product:IGBT Silicon Modules
Configuration:Single
Collector- Emitter Voltage VCEO Max:1600 V
Collector-Emitter Saturation Voltage:3.5 V
Continuous Collector Current at 25 C:600 A
Gate-Emitter Leakage Current:400 nA
Power Dissipation:3.9 KW
Maximum Operating Temperature:+ 125 C
Package / Case:IHM130
Maximum Gate Emitter Voltage:+/- 20 V
Minimum Operating Temperature:- 40 C
Mounting Style:SMD/SMT
Standard Pack Qty:8

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