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PBMB200B12 Nihon IGBT

PBMB200B12

  • Model: PBMB200B12
  • 361 Units in Stock
  • Manufactured by: Nihon

Description of PBMB200B12

Manufacturer:Infineon
RoHS:No
Product:IGBT Silicon Modules
Configuration:Triple Common Emitter Common Gate
Collector- Emitter Voltage VCEO Max:3300 V
Collector-Emitter Saturation Voltage:3.4 V
Continuous Collector Current at 25 C:2000 A
Gate-Emitter Leakage Current:400 nA
Power Dissipation:14.7 KW
Maximum Operating Temperature:+ 125 C
Package / Case:IHM130
Maximum Gate Emitter Voltage:+/- 20 V
Minimum Operating Temperature:- 40 C
Mounting Style:SMD/SMT
Standard Pack Qty:2

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