PCHMB75B12

Description

The IGBT technology is the key to International Rectifier's advanced line of IMS (Insulated Metal Substrate) Power Modules. These modules are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar power MOSFET. This superior technology has now been coupled to a state of the art materials system that maximizes power throughput with low thermal resistance. This package is highly suited to motor drive applications and where space is at a premium.

Key Parameters

• Output Current in a Typical 20 kHz Motor Drive
• 12 A_RMS per phase (3.5 kW total) with T_C = 90°C, T_J = 125°C
• Supply Voltage 360Vdc
• Power Factor 0.8
• Modulation Depth 115%