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PDMB150B12C2 Nihon IGBT

PDMB150B12C2

  • Model: PDMB150B12C2
  • 355 Units in Stock
  • Manufactured by: Nihon

Description of PDMB150B12C2

Manufacturer:Infineon
Product Category:IGBT Modules
RoHS:No
Product:IGBT Silicon Modules
Configuration:Dual
Collector- Emitter Voltage VCEO Max:1200 V
Collector-Emitter Saturation Voltage:2.6 V
Continuous Collector Current at 25 C:75 A
Gate-Emitter Leakage Current:400 nA
Power Dissipation:310 W
Maximum Operating Temperature:+ 125 C
Package / Case:34MM
Maximum Gate Emitter Voltage:+/- 20 V
Minimum Operating Temperature:- 40 C
Mounting Style:Screw
Standard Pack Qty:10

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