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FP25R12W2T4PB11BPSA1

In Stock: 353

FP25R12W2T4PB11BPSA1
Model: FP25R12W2T4PB11BPSA1
CategoriesDiscrete Semiconductor ProductsTransistors - IGBTs - ModulesManufacturerInfineon TechnologiesSeriesEasyPIMâ„¢ 2BPart StatusActiveIGBT ... more info

FP25R12W2T4PBPSA1

In Stock: 746

FP25R12W2T4PBPSA1
Model: FP25R12W2T4PBPSA1
CategoriesDiscrete Semiconductor ProductsTransistors - IGBTs - ModulesManufacturerInfineon TechnologiesSeriesEasyPIMâ„¢ 2BPart StatusActiveIGBT ... more info

FP25R12W2T4_B11

In Stock: 96

FP25R12W2T4_B11
Model: FP25R12W2T4_B11
Manufacturer :Infineon Product :IGBT Silicon Modules Configuration :Single Dual Collector Dual Emitter Collector- Emitter Voltage VCEO Max :1200 V ... more info

FP30R06KE3

In Stock: 96

FP30R06KE3
Model: FP30R06KE3
Description Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of six IGBT Transistors in a three ... more info

FP30R06W1E3

In Stock: 96

FP30R06W1E3
Model: FP30R06W1E3
Manufacturer :Infineon Product :IGBT Silicon Modules Configuration :Dual Collector- Emitter Voltage VCEO Max :1700 V Continuous Collector Current at ... more info

FP30R06YE3

In Stock: 125

FP30R06YE3
Model: FP30R06YE3
Key Parameters Absolute Maximum Ratings (T C =25°C) Item Symbol Unit MBN1200H33D Collector Emitter Voltage VCES V 3,300 Gate Emitter Voltage ... more info

FP30R06YE3BOMA1

In Stock: 100

FP30R06YE3BOMA1
Model: FP30R06YE3BOMA1
CategoryDiscrete Semiconductor ProductsFamilyTransistors - IGBTs - ModulesManufacturerInfineon TechnologiesSeries*Part StatusLast Time Buy

FP30R06YE3_B4

In Stock: 300

FP30R06YE3_B4
Model: FP30R06YE3_B4
Manufacturer :Infineon

FP30R07U1E4BPSA1

In Stock: 353

FP30R07U1E4BPSA1
Model: FP30R07U1E4BPSA1
CategoriesDiscrete Semiconductor ProductsTransistors - IGBTs - ModulesManufacturerInfineon TechnologiesSeries-Part StatusObsoleteIGBT TypeTrench ... more info

FP35R12KS4CG

In Stock: 158

FP35R12KS4CG
Model: FP35R12KS4CG
Description Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a ... more info


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