Key Parameters Absolute Maximum Ratings (T C =25°C) Item Symbol Unit MBN1200E17E Collector Emitter Voltage VCES V 1,700 Gate Emitter Voltage ... more info
Features Silicon N-channel IGBT 1700V E version Soft switching behavior & low conduction loss: Soft low-injection punch-through with trench gate ... more info
Manufacturer :Infineon Product :IGBT Silicon Modules Configuration :Dual Collector- Emitter Voltage VCEO Max :1200 V Continuous Collector Current at ... more info
Key Parameters Absolute Maximum Ratings (T C =25°C) Item Symbol Unit Value Collector-Emitter Voltage VCES V 1,200 Gate-Emitter Voltage VGES V ... more info
Absolute Maximum Ratings (at Tc=25°C unless otherwise specified) Items Symbols Conditions Maximum ratings Units InverterCollector-Emitter ... more info