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QM100DY-HK Mitsubishi IGBT

QM100DY-HK

  • Model: QM100DY-HK
  • 315 Units in Stock
  • Manufactured by: Mitsubishi

Description of QM100DY-HK

Manufacturer:Infineon
Product:IGBT Silicon Modules
Configuration:Dual Common Emitter Common Gate
Collector- Emitter Voltage VCEO Max:1700 V
Collector-Emitter Saturation Voltage:2.6 V
Continuous Collector Current at 25 C:1300 A
Gate-Emitter Leakage Current:400 nA
Power Dissipation:6.6 KW
Maximum Operating Temperature:+ 125 C
Package / Case:IHM
Maximum Gate Emitter Voltage:+/- 20 V
Minimum Operating Temperature:- 40 C
Mounting Style:Screw
Standard Pack Qty:2

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