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QM30HQ-24 Mitsubishi IGBT

QM30HQ-24

  • Model: QM30HQ-24
  • 336 Units in Stock
  • Manufactured by: Mitsubishi

Description of QM30HQ-24

Manufacturer:Infineon
Product Category:IGBT Modules
RoHS:No
Product:IGBT Silicon Modules
Configuration:Half Bridge Module
Collector- Emitter Voltage VCEO Max:1200 V
Collector-Emitter Saturation Voltage:2.5 V
Continuous Collector Current at 25 C:210 A
Gate-Emitter Leakage Current:400 nA
Power Dissipation:1.25 KW
Maximum Operating Temperature:+ 150 C
Package / Case:Half Bridge GAL 2
Maximum Gate Emitter Voltage:20 V
Mounting Style:Screw
Standard Pack Qty:500

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