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QM50TX-H Mitsubishi IGBT

QM50TX-H

  • Model: QM50TX-H
  • 39 Units in Stock
  • Manufactured by: Mitsubishi

Description of QM50TX-H

Symbol Parameter Conditions Ratings Unit
VCEX (SUS) Collector-emitter voltage IC=1A, VEB=2V 600 V
VCEX Collector-emitter voltage VEB=2V 600 V
VCBO Collector-base voltage Emitter open 600 V
VEBO Emitter-base voltage Collector open 7 V
IC Collector current DC 50 A
–IC Collector reverse current DC (forward diode current) 50 A
PC Collector dissipation TC=25 C 310 W
IB Base current DC 3 A
–ICSM Surge collector reverse current
(forward diode current)		 Peak value of one cycle of 60Hz (half wave) 500 A
Tj Junction temperature   –40~+150 C
Tstg Storage temperature   –40~+125 C
Viso Isolation voltage Charged part to case, AC for 1 minute 2500 V
— Mounting torque Main terminal screw M4 0.98~1.47 N·m
10~15 kg·cm
Mounting screw M5 1.47~1.96 N·m
15~20 kg·cm
— Weight Typical value 520 g

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