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QM75DX-H Mitsubishi IGBT

QM75DX-H

  • Model: QM75DX-H
  • 338 Units in Stock
  • Manufactured by: Mitsubishi

Description of QM75DX-H

Manufacturer:Infineon
Product Category:IGBT Modules
RoHS:No
Product:IGBT Silicon Modules
Configuration:Dual Common Emitter Common Gate
Collector- Emitter Voltage VCEO Max:1200 V
Collector-Emitter Saturation Voltage:2.7 V
Continuous Collector Current at 25 C:1600 A
Gate-Emitter Leakage Current:400 nA
Power Dissipation:10 KW
Maximum Operating Temperature:+ 150 C
Package / Case:IHM
Maximum Gate Emitter Voltage:+/- 20 V
Minimum Operating Temperature:- 40 C
Mounting Style:Screw
Standard Pack Qty:2

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