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RM100DZ-M Mitsubishi IGBT

RM100DZ-M

  • Model: RM100DZ-M
  • 352 Units in Stock
  • Manufactured by: Mitsubishi

Description of RM100DZ-M

Manufacturer:Infineon
Product Category:IGBT Modules
RoHS:No
Product:IGBT Silicon Modules
Configuration:Hex
Collector- Emitter Voltage VCEO Max:1200 V
Collector-Emitter Saturation Voltage:2.1 V
Continuous Collector Current at 25 C:250 A
Gate-Emitter Leakage Current:400 nA
Power Dissipation:1 KW
Maximum Operating Temperature:+ 125 C
Package / Case:EconoPACK 3A
Maximum Gate Emitter Voltage:20 V
Minimum Operating Temperature:- 40 C
Mounting Style:Screw
Standard Pack Qty:10

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