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RM30DZ-2H Mitsubishi IGBT

RM30DZ-2H

  • Model: RM30DZ-2H
  • 337 Units in Stock
  • Manufactured by: Mitsubishi

Description of RM30DZ-2H

Manufacturer:Infineon
Product Category:IGBT Modules
RoHS:No
Product:IGBT Silicon Modules
Configuration:Dual
Collector- Emitter Voltage VCEO Max:1200 V
Collector-Emitter Saturation Voltage:2.7 V
Continuous Collector Current at 25 C:400 A
Gate-Emitter Leakage Current:400 nA
Power Dissipation:2700 W
Maximum Operating Temperature:+ 150 C
Package / Case:IHM130
Maximum Gate Emitter Voltage:+/- 20 V
Minimum Operating Temperature:- 40 C
Mounting Style:SMD/SMT
Standard Pack Qty:8

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