PARAMETER	SYMBOL	CONDITION	MIN	TYP	MAX	UNIT
Collector-to-Emitter Breakdown Voltage for each one of Q1,2,3,4	V_(BR)CES	V_GE=0V,I_C=0.5 mA, T_j = 25^oC	2900⁽¹⁾	-	-	v
Collector-to-Emitter Leakage Current	ICES	V_GE=0V, V_CE=2500V, T_j = 25 ^oC V_CE=2000V, T_j = 125^oC⁽¹⁾		-	0.5 2	mA
Continuous Collector Current	I_C	V_GE=10V	-	-	1⁽²⁾	A
Maximum Pulsed Collector Current, 5μ sec	I_CM	T_C = 25^oC	-	-	100	A

Gate-Source Threshold Voltage	V_GS(th)	V_CE = V_GE I_C = 1mA	5.0	-	7.5	V
Gate Input Capacitance	C_ISS	V_CE = 25V	-	12.5	-	nF
Collector-to-Emitter Saturation Voltage for each one of Q1,2,3,4	V_CEsat	V_GE = 15 V, I_C = 2.0 A	-		0.8	V
Junction to Base Thermal Resistance	R_thjc				1.0	^oC/W
Nominal Gate-to-Emitter Zener Breakdown Voltage, I_Z = 1mA	V_Z		17.5	18.5	19.0	V
Series Zener Breakdown Voltage, I_Z = 1mA	V_Z		11.0	11.5	12.5	V
Operating and Storage Junction Temperature	Tj		-40		100	^oC
Operating Case Temperature	Tj		-40		100	^oC
Pin-To-Base plate Voltage Isolation	V_ISO	1 minute, at sea level			10000	V