Symbol	Conditions		Values	Unit
IGBT
V_CES			1200	V
I_C	T_j = 175^oC	T_c = 25^oC	232	A
	T_j = 175^oC	T_c = 80^oC	179	A
I_Cnom			150	A
I_CRM	I_CRM = 3xI_Cnom		450	A
V_GES			-20 ... 20	V
t_psc	V_CC = 800V V_GE ≤ 20V V_CES ≤ 1200V	T_j = 150^oC	10	µs
T_j			-40 ... 175	^oC
Inverse diode
I_F	T_j = 175^oC	T_c = 25^oC	189	A
	T_j = 175^oC	T_c = 80^oC	141	A
I_Fnom			150	A
I_FRM	I_FRM = 3xI_Fnom		450	A
I_FSM	t_p = 10ms, sin 180^o, T_j = 25^oC		900	A
T_j			-40 ... 175	^oC
Module
I_t(RMS)			600	A
T_stg			-40 ... 125	^oC
V_isol	AC sinus 50Hz, t = 1min		4000	V