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SEMIX303GB12E4S Semikron IGBT

SEMIX303GB12E4S

  • Model: SEMIX303GB12E4S
  • 254 Units in Stock
  • Manufactured by: Semikron

Description of SEMIX303GB12E4S

Key Parameters Absolute Maximum Ratings

SymbolConditionsValuesUnit
IGBT
VCES
1200V
ICTj = 175 °CTc = 25 °C466
A
 Tc = 80 °C359
A
ICnom 300
A
ICRMICRM = 3xICnom900A
VGES
-20 ~ 20V
tpscVCC = 800 V
VGE ≤ 20 V
VCES ≤ 1200 V		Tj = 150 °C10μs
Tj -40 ~ 175°C
Inverse diode
IFTj = 175 °CTc = 25 °C338A
 Tc = 80 °C252A
IFnom 300A
IFRMIFRM = 2xIFnom900A
IFSMtp = 10 ms, sin 180°, Tj = 25 °C1485A
Tj -40 ~ 175°C
Module
It(RMS)
600A
Tstg
-40 ~ 125°C
VisolAC sinus 50Hz, t = 1 min4000V


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