SHD724602 Sensitron IGBT

SHD724602

600 VOLT, 70 AMP IGBT DEVICE VERY HIGH SPEED WITH ULTRAFAST REVERSE RECOVERY DIODE

PARAMETER	SYMBOL	MIN	TYP	MAX	UNIT
IGBT SPECIFICATIONS
Collector to Emitter Breakdown Voltage I_C = 250 μA, V_GE = 0V	BV_CES	600	-	-	V
Continuous Collector Current T_C=25^oC ^oC T_C=90	I_C	-	-	45⁽¹⁾	A
Pulsed Collector Current, 1msec	I_CM	-	-	150	A
Gate to Emitter Voltage	V_GE	-	-	+/-20	V
Gate-Emitter Leakage Current, VGE = +/-20V	I_GES	-	- +/-	100	nA
Gate Threshold Voltage, IC= 250 μA	V_GE(TH)	2.5	-	5.0	V
Zero Gate Voltage Collector Current V_CE = 600 V, V_GE=0V T_i=25^oC V_CE = 480 V, V_GE=0V T_i=125^oC	I_CES	- -	- -	0.2 3.0	mA mA
Collector to Emitter Saturation Voltage, T_C=25 ^oC I_C=24A, V_GE=15V, T_C=125 ^oC	V_CE(SAT)	-	2.2 2.0	2.5 -	V
Input Capacitance Output Capacitance Reverse Transfer Cap. V_CE = 25 V, V_GE = 0 V, f = 1 MHz	C_ies C_oes C_res	-	1500 145 40	-	pF
Turn On Delay Time Rise Time Turn Off Delay Time Fall Time Turn off Energy Loss (T_j = 125 ^oC, I_C = 24A, V_GE = 15V, inductive load, V_CC = 400 V, R_G = 5 Ω	t_d(on) t_r t_d(off) t_f E_off E_on	- - - - - -	13 17 130 80 0.38 0.22	- - - - - -	nsec mJ mJ
Maximum Thermal Resistance	R_θJC	-	-	0.85	^oC/W
Maximum and Storage Junction Temperature	T_jmax	-55	-	150	^oC