PARAMETER	SYMBOL	MIN	TYP	MAX	UNIT
IGBT SPECIFICATIONS
Collector to Emitter Breakdown Voltage I_C = 250 μA, V_GE = 0V	BV_CES	600	-	-	V
Continuous Collector Current T_C=25^oC ^oC T_C=90	I_C	-	-	45⁽¹⁾	A
Pulsed Collector Current, 1msec	I_CM	-	-	150	A
Gate to Emitter Voltage	V_GE	-	-	+/-20	V
Gate-Emitter Leakage Current, VGE = +/-20V	I_GES	-	- +/-	100	nA
Gate Threshold Voltage, IC= 250 μA	V_GE(TH)	2.5	-	5.0	V
Zero Gate Voltage Collector Current V_CE = 600 V, V_GE=0V T_i=25^oC V_CE = 480 V, V_GE=0V T_i=125^oC	I_CES	- -	- -	0.2 3.0	mA mA
Collector to Emitter Saturation Voltage, T_C=25 ^oC I_C=24A, V_GE=15V, T_C=125 ^oC	V_CE(SAT)	-	2.2 2.0	2.5 -	V
Input Capacitance Output Capacitance Reverse Transfer Cap. V_CE = 25 V, V_GE = 0 V, f = 1 MHz	C_ies C_oes C_res	-	1500 145 40	-	pF
Turn On Delay Time Rise Time Turn Off Delay Time Fall Time Turn off Energy Loss (T_j = 125 ^oC, I_C = 24A, V_GE = 15V, inductive load, V_CC = 400 V, R_G = 5 Ω	t_d(on) t_r t_d(off) t_f E_off E_on	- - - - - -	13 17 130 80 0.38 0.22	- - - - - -	nsec mJ mJ
Maximum Thermal Resistance	R_θJC	-	-	0.85	^oC/W
Maximum and Storage Junction Temperature	T_jmax	-55	-	150	^oC