SIGC121T120R2C Infineon IGBT

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SIGC121T120R2C

Model: SIGC121T120R2C
449 Units in Stock
Manufactured by: Infineon

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Description of SIGC121T120R2C

Description

Power Diode Module DD60HB series are designed for various rectifier circuits. DD60HB has two diode chips connected in series and the mounting base is elctrically isolated from elements for simple heatsink construction. Wide voltage ratage up to, 1,600V is avaiable for various input voltage.

Key Parameters

Maximum Ratings

Symbol	Item		Conditions	Ratings	Unit
V_RRM	Repetitive Peak Reverse Voltage			1200	V
V_RSM	Non-Repetitive Peak Reverse Voltage			1350	V
I_{F (AV)}	Average Forward Current		Single phase, half wave, 180° conduction, Tc:111°C	60	A
I_{F (RMS)}	R.M.S. Forward Current		Single phase, half wave, 180° conduction, Tc:111°C	95	A
I_FSM	Surge Forward Current		½cycle, 50/60Hz, peak Value, non-repetitive	1100/1200	A
I²t	I²t		Value for one cycle of surge current	6000	A²S
V_ISO	Isolation Breakdown Voltage (R.M.S.)		A.C.1minute	2500	V
Tj	Junction Temperature			-40 to +125	°C
Tstg	Storage Temperature			-40 to +125	°C
	Mounting Torque	Mounting (M5)	Recommended 2.5-3.9 (25-40)	4.7 (48)	N•m (kgf•cm)
	Mounting Torque	Terminal (M5)	Recommended 1.5-2.5 (15-25)	2.7 (28)	N•m (kgf•cm)
	Mass			170	g