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SKM75GB124D Semikron IGBT

SKM75GB124D

  • Model: SKM75GB124D
  • 344 Units in Stock
  • Manufactured by: Semikron

Description of SKM75GB124D

Features

  • MOS input (voltage controlled)
  • N channel, homogeneous Si-structure (NPT-Non punch-through IGBT)
  • Low losshigh density chips
  • Low tail current
  • High short circuit capability, self limiting to 6 x IC
  • Latch-up free
  • Fast & soft inverse CAL diodes
  • Isolated copper baseplate using DCB Direct Copper Bonding Technology without hard mould
  • Large clearance (10mm) and creepage distance (20mm)

Application

  • Switching (not for linear use)

Key Parameters

Absolute Maximum Ratings - IGBT

SymbolConditionsValuesUnits
VCES 1200V
ICTc = 25 (75) °C100 (75)A
ICRMtp = 1 ms
100
A
VGES ±20V
Tvj (Tstg)TOPERATION ≤ Tstg
-40...+150 (125)°C
VisolAC, 1 min.2500V


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