A high density Dual H-Bridge capabable of driving 7.5A peak at 100V. This small footprint dual bridge contains low Rdson power FETs , FET drivers and precision current sense reistors. The device does not need heat sinking and is housed in an encapsulated sealed enclosure. The drive input signals are TTL compatable.

KEY PARAMETER ELECTRICAL CHARACTERISTICS PER MOSFET DEVICE (Tj=25^oC UNLESS OTHERWISE SPECIFIED)

PARAMETER	SYMBOL	MIN	TYP	MAX	UNIT
MOSFET SPECIFICATIONS (Per Device)
Drain-to-Source Breakdown Voltage	BV_DSS	100	-	-	V
Continuos Drain Current T_C = 25 ^oC T_C = 100 ^oC	I_D	-	-	7.5 4.8	A
Pulsed Drain Current, Pulse Width limited to 1 msec	I_DM	-	-	50	A
Zero Gate Voltage Drain Current V_DS = 80V, V_GS=0V T_i=25^oC VDS= 80 V, VGS=0V T_i=125^oC	I_CSS	-	-	1 250	uA uA
Static Drain-to-Source On Resistance, T_j= 25 ^oC T_j = 150 ^oC I_D= 7.5A, V_GS = 10V,	R_DSon	-	0.019 0.035	0.023 .043	Ω
Maximum Thermal Resistance	R_θJC	-	-	35	^oC/W
Maximum operating Junction Temperature	T_jmax	-40	-	150	^oC
Maximum Storage Junction Temperature	T_jmax	-55	-	150	^oC
Rise Time	t_r		30		^ns
Fall Time	t_f		30		^ns