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SPM6G080-120D Sensitron IGBT

SPM6G080-120D

  • Model: SPM6G080-120D
  • 379 Units in Stock
  • Manufactured by: Sensitron

Description of SPM6G080-120D

Description

Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation

Key Parameters

ELECTRICAL CHARACTERISTICS PER IGBT DEVICE (Tj=250C UNLESS OTHERWISE SPECIFIED)

PARAMETERSYMBOLMINTYPMAXUNIT
IGBT SPECIFICATIONS
Collector to Emitter Breakdown Voltage
IC = 250 mA, VGE = 0V		BVCES1200--V
Continuous Collector Current TC = 25 oC
TC = 90 oC		IC--

80

70

A
Pulsed Collector Current, 1mSICM--200A
Gate to Emitter VoltageVGE--+/-20V
Gate-Emitter Leakage Current , VGE = +/-20VIGES--+/-100nA
Gate Threshold Voltage, IC=2mAV GE(TH)3.0-6.0V
Zero Gate Voltage Collector Current
VCE = 1200 V, VGE=0V Ti=25oC
VCE = 900 V, VGE=0V Ti=125oC		ICES--

1

10

mA

mA

Collector to Emitter Saturation Voltage, TC = 25 oC
IC = 60A, VGE = 15V,		VCE(SAT)-2.52.8V
Maximum Thermal ResistanceRθJC--0.3oC/W


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