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SPM6G140-120D Sensitron IGBT

SPM6G140-120D

  • Model: SPM6G140-120D
  • 388 Units in Stock
  • Manufactured by: Sensitron

Description of SPM6G140-120D

Description

Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation

Key Parameters

ELECTRICAL CHARACTERISTICS PER IGBT DEVICE (Tj=250C UNLESS OTHERWISE SPECIFIED)

PARAMETERSYMBOLMINTYPMAXUNIT
IGBT SPECIFICATIONS     
Collector to Emitter Breakdown Voltage
IC = 250 µA, VGE = 0V		BVCES1200--V
Continuous Collector Current TC = 25 oC
TC = 90 oC		IC--

140

120

A
Pulsed Collector Current, 1mSICM--350A
Gate to Emitter VoltageVGE--+/-20V
Gate-Emitter Leakage Current , VGE = +/-20VV GE(TH)3.0-6.0V
Zero Gate Voltage Collector Current
VCE = 600 V, VGE=0V Ti=25oC
VCE = 480 V, VGE=0V Ti=125oC		ICES--

2

20

mA

mA

Collector to Emitter Saturation Voltage, TC = 25 oC
IC = 100A, VGE = 15V,		VCE(SAT)-2.52.8V
Maximum Thermal ResistanceRθJC--0.15oC/W
Brake IGBT
60A Maximum Current		   3.0oC/W


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