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SPM6M080-010D Sensitron IGBT

SPM6M080-010D

  • Model: SPM6M080-010D
  • 390 Units in Stock
  • Manufactured by: Sensitron

Description of SPM6M080-010D

Description

A 100 VOLT, 80 AMP, THREE PHASE MOSFET BRIDGE

Key Parameters

ELECTRICAL CHARACTERISTICS PER MOSFET DEVICE  (Tj=25oC UNLESS OTHERWISE SPECIFIED)

 

PARAMETERSYMBOLMINTYPMAXUNIT
MOSFET SPECIFICATIONS

Drain-to-Source Breakdown Voltage

ID=500 µA, VGS=0V

BVDSSF100--V

Continues Drain Current                                           TC=25oC

                                                                                TC=90oC

ID--

80

70

A
Pulsed Drain Current, Pulse Width limited to 1msecIDM--200A

Zero Gate Voltage Drain Current
VDS = 100 V, VGS=0V Ti=25oC
VDS= 80 V, VGS=0V Ti=125oC

ICSS--

 

1
3

 

mA
mA

Static Drain-to-Source On Resistance,                        Tj = 25 OC
                                                                         Tj = 150 OC
ID= 60A, VGS = 15V,		RDSON-

0.009

0.018

0.012

-

Ω
Maximum Thermal ResistanceRθJC-40-150oC
Maximum operating Junction TemperatureTjmax-40-150oC
Maximum Storage Junction TemperatureTjmax-55-150oC


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