STGB7NB40LZ STMicro IGBT

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STGB7NB40LZ

Model: STGB7NB40LZ
404 Units in Stock
Manufactured by: STMicro

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Description of STGB7NB40LZ

Description

Using the latest high voltage technology based on apatented strip layout, STMicro electronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The built in collector-gate zener exhibits a very precise active clamping while the gate-emitter zener supplies an ESD protection.

Key Parameters

Absolute Maximum Ratings

Symbol	Parameter	Value	Unit
V_CES	Collector-emitter voltage (V_GS = 0)	CLAMPED	V
V_ECR	Reverse Battery Protection	20	V
V_GE	Gate-emitter voltage	CLAMPED	V
I_C	Collector current (continuous) at 100°C	14	A
R_G	Minimum External Gate Resistor	500	W
P_TOT	Total dissipation at T_C = 25°C	100	W
	Derating Factor	0.66	W/°C
E_CL	Single Pulse Collector to Emitter Avalanche Energy I_C= 13 A ; T_j= 150°C (see fig.1-2)	130	mJ
E_ECAV	Reverse Avalanche Energy I_C = 7 A ;f= 100 Hz ; T_c = 25°C	10	mJ
T_stg	Storage Temperature	–55 to 175	°C
T_j	Operating Junction Temperature	–55 to 175	°C