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STGD6NC60H STMicro IGBT

STGD6NC60H

  • Model: STGD6NC60H
  • 397 Units in Stock
  • Manufactured by: STMicro

Description of STGD6NC60H

Description

Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix “H” identifies a family optimized for high frequency application in order to achieve very high switching performances (reduced tfall) manta in ing a low voltage drop.

Key Parameters

Absolute maximum ratings
SymbolParameterValueUnit
VCESCollector-emitter voltage (VGS = 0)600V
IC(1)Collector current (continuous) at TC = 25°C15A
IC(1)Collector current (continuous) at TC = 100°C7A
ICM(2)Collector current (pulsed)21A
VGEGate-emitter voltage±20V
PTOTTotal dissipation at TC = 25°C56W
TstgStorage temperature– 55 to 150°C
TjOperating junction temperature
TlMaximum lead temperature for soldering purpose (for 10sec. 1.6 mm from case)300°C

1. Calculated according to the iterative formula::

IC(TC) =                 TJMAX – TC                
              RTHJ – C × VCESAT(MAX)(TC, IC)

2. Pulse width limited by max junction temperature


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