Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding erformances. The suffix “K” identifies a family optimized for high frequency motor control applications with short circuit withstand capability.

Key Parameters

Absolute maximum ratings

Symbol	Parameter	Value		Unit
Symbol	Parameter	D²PAK/TO-220	DPAK	Unit
V_CES	Collector-emitter voltage (V_GS = 0)	600		V
I_C⁽¹⁾	Collector current (continuous) at T_C = 25°C	15		A
I_C⁽¹⁾	Collector current (continuous) at T_C = 100°C	8		A
I_CP⁽²⁾	Pulsed collector current	30		A
V_GE	Gate-emitter voltage	±20		V
P_TOT	Total dissipation at T_C = 25°C	65	62	W
T_j	Operating junction temperature	– 55 to 150		°C
T_scw	Short circuit withstand time	10		μs