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STGDL6NC60D STMicro IGBT

STGDL6NC60D

  • Model: STGDL6NC60D
  • 405 Units in Stock
  • Manufactured by: STMicro

Description of STGDL6NC60D

Description

Based on PowerMESH technology and thanks to a new lifetime control system, this new series exhibits very low turn-off energy realizing the best trade-off between on-state voltage and switching losses and so allowing very high operating frequencies.

Key Parameters

Absolute maximum ratings
SymbolParameterValueUnit
DPAKTO-220
D²PAK
TO-220FP 
VCESCollector-emitter voltage (VGE = 0)600V
IC(1)Collector current (continuous) at TC = 25 °C13147A
IC(1)Collector current (continuous) at TC = 100 °C563A
ICL(2)Turn-off latching current18A
ICP(3)Pulsed collector current18A
VGEGate-emitter voltage±20V
IFDiode RMS forward current at TC = 25 °C7A
IFSMSurge non repetitive forward current tp=10ms
sinusoidal
20A
PTOTTotal dissipation at TC = 25 °C505622W
VISOInsulation withstand voltage (RMS) from all three leads to external heat sink (t=1 s; TC=25 °C)----2500V
TjOperating junction temperature– 55 to 150°C

1. Calculated according to the iterative formula:

IC(TC) =                    Tj(max)– TC                         
              Rthj – c × VCE(sat)(max)(Tj(max), IC(TC))

2. Vclamp = 80%,(VCES), Tj =150°C, RG = 10 Ω, VGE = 15 V

3. Pulse width limited by max junction temperature allowed


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