Description of STGF10NC60HD
		Description
This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior.
 Key Parameters
Absolute maximum ratings| Symbol | Parameter | Value | Unit | 
| TO-220 / D²PAK
 | DPAK | TO-220FP | 
| VCES | Collector-emitter voltage (VGE = 0) | 600 | V | 
| IC(1) | Collector current (continuous) at TC = 25 °C | 20 | 9 | A | 
| IC(1) | Collector current (continuous) at TC = 100 °C | 10 | 6 | A | 
| ICL(2) | Turn-off latching current | 30 | A | 
| ICP(3) | Pulsed collector current | 30 | A | 
| VGE | Gate-emitter voltage | ±20 | V | 
| IF | Diode RMS forward current at TC = 25 °C | 10 | A | 
| IFSM | Surge not repetitive forward current tp = 10 ms sinusoidal | 20 | A | 
| PTOT | Total dissipation at TC = 25 °C | 65 | 62 | 24 | W | 
| VISO | Insulation withstand voltage (RMS) from all three leads to  external heat sink (t = 1 s; TC = 25 °C) |  |  | 2500 | V | 
| TJ | Operating junction temperature | – 55 to 150 | °C | 
1. Calculated accordi