Description of STGF10NC60HD
Description
This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior.
Key Parameters
Absolute maximum ratingsSymbol | Parameter | Value | Unit |
TO-220 / D²PAK | DPAK | TO-220FP |
VCES | Collector-emitter voltage (VGE = 0) | 600 | V |
IC(1) | Collector current (continuous) at TC = 25 °C | 20 | 9 | A |
IC(1) | Collector current (continuous) at TC = 100 °C | 10 | 6 | A |
ICL(2) | Turn-off latching current | 30 | A |
ICP(3) | Pulsed collector current | 30 | A |
VGE | Gate-emitter voltage | ±20 | V |
IF | Diode RMS forward current at TC = 25 °C | 10 | A |
IFSM | Surge not repetitive forward current tp = 10 ms sinusoidal | 20 | A |
PTOT | Total dissipation at TC = 25 °C | 65 | 62 | 24 | W |
VISO | Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s; TC = 25 °C) | | | 2500 | V |
TJ | Operating junction temperature | – 55 to 150 | °C |
1. Calculated accordi