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STGF19NC60KD STMicro IGBT

STGF19NC60KD

  • Model: STGF19NC60KD
  • 410 Units in Stock
  • Manufactured by: STMicro

Description of STGF19NC60KD

Description

This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior.

Key Parameters

Absolute maximum ratings
SymbolParameterValueUnit
D2PAK
TO-220		TO-220FP 
VCESCollector-emitter voltage (VGE = 0)600V
IC(1)Collector current (continuous) at TC = 25 °C3516A
IC(1)Collector current (continuous) at TC = 100 °C2010A
ICL(2)Turn-off latching current75A
ICP(3)Pulsed collector current75A
VGEGate-emitter voltage±20V
IFDiode RMS forward current at TC = 25 °C20A
IFSMSurge non repetitive forward current tp = 10 ms
sinusoidal		50A
PTOTTotal dissipation at TC = 25 °C12532W
tscwShort circuit withstand time, VCE = 0.5 V(BR)CES
Tj = 125 °C, RG = 10 Ω, VGE = 12 V		10 μs
TjOperating junction temperature– 55 to 150°C

1. Calculated according to the iterative formula:

IC(TC) =


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