Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advaced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix “H” identifies a family optimized for high frequency application in order to achieve very high switching performances (reduced tfall) mantaining a low voltage drop.

Key Parameters

Absolute maximum ratings

Symbol	Parameter	Va lue		Unit
Symbol	Parameter	D²PAK/I²PAK/ TO-220	TO-220FP	Unit
V_CES	Collector-emitter voltage (V_GS = 0)	600		V
I_C⁽¹⁾	Collector current (continuous) at T_C = 25°C	15	6	A
I_C⁽¹⁾	Collector current (continuous) at T_C = 100°C	7	3	A
I_CM⁽²⁾	Collector current (pulsed)	21		A
V_GE	Gate-emitter voltage	±20		V
I_F	Diode RMS forward current at Tc=25°C	10		A
P_TOT	Total dissipation at T_C = 25°C	56	20	W
V_ISO	Insulation withstand voltage A.C.(t=1sec;Tc=25°C)	--	2500
T_stg	Storage temperature	– 55 to 150		°C
T_j	Operating junction temperature	– 55 to 150		°C
T_l	Maximum lead temperature for soldering purpose (for 10sec. 1.6 mm from case)	300		°C