This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. The built in collector-gate Zener exhibits a very precise active clamping while the gateemitter Zener supplies an ESD protection.

Key Parameters

Absolute maximum ratings

Symbol	Parameter	Value	Unit
V_CES	Collector-emitter voltage (V_GE = 0)	V_CES(clamped)	V
V_ECS	Emitter collector voltage (V_GE = 0)	18	V
I_C⁽¹⁾	Collector current (continuous) at T_C = 25 °C	20	A
I_C⁽¹⁾	Collector current (continuous) at T_C = 100 °C	10	A
I_CP⁽²⁾	Pulsed collector current	40	A
I_CL⁽³⁾	Turn-off latching current	40	A
V_GE	Gate-emitter voltage	V_GE (clamped)	V
P_TOT	Total dissipation at T_C = 25 °C	125	W
ESD(HBM)	Electrostatic sensitive discharge, human body model applied to all three pins (C=100 pF, R=1.5 k?)	4	kV
E_AS	Single pulse energy at T_C = 25 °C	300	mJ
T_stg	Storage temperature	– 65 to 175	°C
T_j	Operating junction temperature	– 65 to 175	°C