Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH ™ IGBTs, with outstanding performances. The suffix “S” identifies a family optimized achieve minimum on-voltage drop for low frequency applications (<1kHz).

Description

Key Parameters

Absolute Maximum ratings

Symbol	Parameter	Value		Unit
		TO-220/D²PAK	TO-220FP
V_CES	Collector-Emitter Voltage (V_GS = 0)	600		V
V_ECR	Reverse Battery Protection	20		V
V_GE	Gate-Emitter Voltage	± 20		V
I_C	Collector Current (continuous) at 25°C	20		A
I_C	Collector Current (continuous) at 100°C	10		A
I_CM⁽¹⁾	Collector Current (pulsed)	80		A
P_TOT	Total Dissipation at T_C = 25°C	80	25	W
	Derating Factor	0.64	0.20	W/°C
V_ISO	Insulation Withstand Voltage A.C.(t=1sec, Tc=25°C)	--	2500	V
T_stg	Storage Temperature	– 55 to 150		°C
T_j	Operating Junction Temperature	– 55 to 150		°C