STGP10NC60KD STMicro IGBTSTGP10NC60KD
Description of STGP10NC60KDDescriptionThis IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. Key Parameters
1. Calculated according to the iterative formula IC(TC) = Tj(max)– TC 2. Vclamp = 80 % VCES, VGE = 15 V, RG = 10 Ω, TJ = 150 °C 3. Pulse width limited by maximum junction temperature and turn-off within RBSOA Request for Quote |
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