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STGP19NC60SD STMicro IGBT

STGP19NC60SD

  • Model: STGP19NC60SD
  • 238 Units in Stock
  • Manufactured by: STMicro

Description of STGP19NC60SD

Description

This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior.

Key Parameters

Absolute maximum ratings

Collector current (continuous) at TC = 25°C

SymbolParameterValueUnit
VCESCollector-emitter voltage (VGS = 0)600V
IC(1)Collector current (continuous) at TC = 25°C50A
IC(1)Collector current (continuous) at TC = 100°C20A
ICP(2)Pulsed collector current80A
IFDiode RMS forward current at TC = 25°C20A
IFSMSurge non repetitive forward current tp = 10ms sinusoidal50A
VGEGate-emitter voltage±20V
PTOTTotal dissipation at TC = 25°C125W
TjOperating junction temperature– 55 to 150°C


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