Description of STGP8NC60KD
Description
This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior.
Key Parameters
Absolute maximum ratings | Symbol | Parameter | Value | Unit |
D²PAK Unit
TO-220 | DPAK | TO-220FP |
| VCES | Collector-emitter voltage (VGE = 0) | 600 | V |
| IC(1) | Collector current (continuous)
at TC = 25 °C | 15 | 7 | A |
| IC(1) | Collector current (continuous)
at TC = 100 °C | 8 | 4 | A |
| ICL(2) | Turn-off latching current | 30 | A |
| ICP(3) | Pulsed collector current | 30 | A |
| VGE | Gate-emitter voltage | ±20 | V |
| IF | Diode RMS forward current
at TC = 25 °C | 7 | A |
| IFSM | Surge not repetitive forward current
tp = 10 ms sinusoidal | 20 | A |
| VISO | Insulation withstand voltage (RMS) from all
three leads to external heat sink
( t=1 s; TC = 25 °C) | -- | -- | 2500 | V |
| PTOT | Total dissipation at TC = 25 °C | 65 | 62 | 24 | W |
| Tj | Operating junction temperature | – 55 to 150 | °C |
| Tscw | Short circuit withstand time (VCE = 0.5 VBR(CES), TC = 125 °C, RG = 10 Ω, VGE = 12 V) | 10 | μs |
