Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix “W” identifies a family optimized for very high frequency application.

Key Parameters

Absolute maximum ratings

Symbol	Parameter	Value		Unit
Symbol	Parameter	TO-220	TO-247	Unit
V_CES	Collector-emitter voltage (V_GS = 0)	600		V
I_C⁽¹⁾	Collector current (continuous) at T_C = 25°C	40	42	A
I_C⁽¹⁾	Collector current (continuous) at T_C = 100°C	22	23	A
I_CL⁽²⁾	Collector current (pulsed)	35		A
I_F	Diode RMS forward current at T_C = 25°C	12		A
V_GE	Gate-emitter voltage	±20		V
P_TOT	Total dissipation at T_C = 25°C	125		W
T_stg	Storage temperature	– 55 to 150		°C
T_j	Operating junction temperature	– 55 to 150		°C