STGW30NC60VD STMicro IGBT

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STGW30NC60VD

This IGBT utilizes the advanced Power MESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior.

Absolute maximum ratings

Symbol	Parameter	Value	Unit
V_CES	Collector-emitter voltage (V_GE = 0)	600	V
I_C⁽¹⁾	Continuous collector current at T_c= 25°C	80	A
I_C⁽¹⁾	Continuous collector current at T_c= 100°C	40	A
I_CP⁽²⁾	Pulsed collector current	150	A
I_CL⁽³⁾	Turn-off latching current	100	A
V_GE	Gate-emitter voltage	± 20	V
I_F	Diode RMS forward current at T_c=25°C	30	A
I_FSM	Surge not repetitive forward current t_p = 10 ms sinusoidal	120	A
P_TOT	Total dissipation at T_C = 25°C	250	W
T_j	Operating junction temperature	– 55 to 150	°C
T_stg	Storage temperature	– 55 to 150	°C