Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix “W” identifies a family optimized for very high frequency application.

Key Parameters

Absolute maximum ratings

Symbol	Parameter	Value	Unit
V_CES	Collector-emitter voltage (V_GS = 0)	600	V
I_C	Collector current (continuous) at 25°C	70	A
I_C	Collector current (continuous) at 100°C	37	A
I_CM⁽¹⁾	Collector current (pulsed)	100	A
I_CL	Turn-off soa minimum current	200	A
V_GE	Gate-emitter voltage	± 20	V
P_TOT	Total dissipation at T_C= 25°C	250	W
T_stg	Storage temperature	– 55 to 150	°C
T_j	Operating junction temperature	– 55 to 150	°C