This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. This device is well suited for the resonant or soft switching application.

Key Parameters

Absolute maximum ratings

Symbol	Parameter	Value	Unit
V_CES	Collector-emitter voltage (V_GE = 0)	1200	V
I_C⁽¹⁾	Collector current (continuous) at 25 °C	60	A
I_C⁽¹⁾	Collector current (continuous) at 100 °C	30	A
I_CL⁽²⁾	Turn-off latching current	45	A
I_CP(³⁾	Pulsed collector current	45	A
V_GE	Gate-emitter voltage	±25	V
P_TOT	Total dissipation at T_C = 25 °C	235	W
I_F	Diode RMS forward current at T_C = 25 °C	30	A
I_FSM	Surge non repetitive forward current t_p = 10 ms sinusoidal	100	A
T_j	Operating junction temperature	–55 to 150	°C