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TM200RZ-H Mitsubishi IGBT

TM200RZ-H

  • Model: TM200RZ-H
  • 359 Units in Stock
  • Manufactured by: Mitsubishi

Description of TM200RZ-H

Manufacturer:Infineon
Product Category:IGBT Modules
RoHS:No
Product:IGBT Silicon Modules
Configuration:Hex
Collector- Emitter Voltage VCEO Max:1200 V
Collector-Emitter Saturation Voltage:2.5 V
Continuous Collector Current at 25 C:300 A
Gate-Emitter Leakage Current:200 nA
Power Dissipation:1.4 KW
Maximum Operating Temperature:+ 150 C
Package / Case:EconoPACK 3A
Maximum Gate Emitter Voltage:20 V
Mounting Style:Screw
Standard Pack Qty:10

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