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TM55RZ-M Mitsubishi IGBT

TM55RZ-M

  • Model: TM55RZ-M
  • 350 Units in Stock
  • Manufactured by: Mitsubishi

Description of TM55RZ-M

Manufacturer:Infineon
Product Category:IGBT Modules
RoHS:No
Product:IGBT Silicon Modules
Configuration:Hex
Collector- Emitter Voltage VCEO Max:1200 V
Collector-Emitter Saturation Voltage:2.5 V
Continuous Collector Current at 25 C:150 A
Gate-Emitter Leakage Current:400 nA
Power Dissipation:680 W
Maximum Operating Temperature:+ 150 C
Package / Case:EconoPACK 3A
Maximum Gate Emitter Voltage:20 V
Mounting Style:Screw
Standard Pack Qty:10

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