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VS-GB200TH120N Vishay IGBT

VS-GB200TH120N

  • Model: VS-GB200TH120N
  • 134 Units in Stock
  • Manufactured by: Vishay

Description of VS-GB200TH120N

CategoriesDiscrete Semiconductor Products
Transistors - IGBTs - Modules
ManufacturerVishay Semiconductor Diodes Division
Series-
Part StatusActive
IGBT Type-
ConfigurationHalf Bridge
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)360A
Power - Max1136W
Vce(on) (Max) @ Vge, Ic2.35V @ 15V, 200A
Current - Collector Cutoff (Max)5mA
Input Capacitance (Cies) @ Vce14.9nF @ 25V
InputStandard
NTC ThermistorNo
Operating Temperature150°C (TJ)
Mounting TypeChassis Mount
Package / CaseDouble INT-A-PAK (3 + 4)
Supplier Device PackageDouble INT-A-PAK

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