>

VUO160-12N07 IXYS IGBT

VUO160-12N07

  • Model: VUO160-12N07
  • 293 Units in Stock
  • Manufactured by: IXYS

Description of VUO160-12N07

Manufacturer:Infineon
Product:IGBT Silicon Modules
Configuration:Single
Collector- Emitter Voltage VCEO Max:1700 V
Collector-Emitter Saturation Voltage:2.6 V
Continuous Collector Current at 25 C:650 A
Gate-Emitter Leakage Current:400 nA
Power Dissipation:3.1 KW
Maximum Operating Temperature:+ 125 C
Package / Case:IHM73
Maximum Gate Emitter Voltage:+/- 20 V
Minimum Operating Temperature:- 40 C
Mounting Style:SMD/SMT
Standard Pack Qty:4

Request for Quote

Your Name*
Company Name*
Country*
Tel*
Email*
We will not use your email for any purpose other than to communicate with you about the information regarding IGBT Express related activity, we will not provide your email to any third party.
Comments If you're looking for other components, please enter part number, quantity in the comment box, or submit RFQ to Email info@igbtexpress.com or sales@jitcomp.com, we will find it for you, even if it didn't show in our inventory database
Part Number Quantity

Related IXYS IGBT product

VUB50-16PO1VUB50-16PO1
VUO190-12N07 VUO190-12N07
Copyright © 2024 IGBT Express. Powered by IGBT Express, IGBT Express,fast delivered.