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VUO82-16N07 IXYS IGBT

VUO82-16N07

  • Model: VUO82-16N07
  • 295 Units in Stock
  • Manufactured by: IXYS

Description of VUO82-16N07

Manufacturer:Infineon
Product Category:IGBT Modules
RoHS:No
Product:IGBT Silicon Modules
Configuration:Single Dual Emitter Dual Collector
Collector- Emitter Voltage VCEO Max:1200 V
Collector-Emitter Saturation Voltage:2.7 V
Continuous Collector Current at 25 C:600 A
Gate-Emitter Leakage Current:400 nA
Power Dissipation:3.9 KW
Maximum Operating Temperature:+ 150 C
Package / Case:IHM130
Maximum Gate Emitter Voltage:+/- 20 V
Minimum Operating Temperature:- 40 C
Mounting Style:SMD/SMT
Standard Pack Qty:8

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