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VWI15-12P1 IXYS IGBT

VWI15-12P1

  • Model: VWI15-12P1
  • 296 Units in Stock
  • Manufactured by: IXYS

Description of VWI15-12P1

Manufacturer:Infineon
Product Category:IGBT Modules
RoHS:No
Product:IGBT Silicon Modules
Configuration:Single Dual Emitter
Collector- Emitter Voltage VCEO Max:1200 V
Collector-Emitter Saturation Voltage:2.6 V
Continuous Collector Current at 25 C:570 A
Gate-Emitter Leakage Current:400 nA
Power Dissipation:2250 W
Maximum Operating Temperature:+ 125 C
Package / Case:62MM
Maximum Gate Emitter Voltage:+/- 20 V
Minimum Operating Temperature:- 40 C
Mounting Style:Screw
Standard Pack Qty:500

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